منابع مشابه
The MOS Single Electron Transistor (MOS-SET)
We study very small gated SOI nanowires defined by e-beam lithography. Electrical transport at low temperature (below ≈ 10K) is dominated by Coulomb blockade. In the metallic regime at high Vg very periodic oscillations are recorded and the measured period corresponds to the whole surface of wire covered by the gate. Below the threshold the energy level quantization is clearly seen. The interpl...
متن کاملOptimizing MOS Transistor Mismatch
An investigation of MOS transistor mismatch is undertaken and a methodology is developed for optimizing mismatch without increasing layout area. Dramatic improvements of up to 300% in matching can be realized by selecting the optimum W=L ratio without changing the overall WL area product. The theoretical basis for the obtainable improvements is fully described and an expression is derived and v...
متن کاملAn analytical MOS Transistor Model Dedicated to Crosstalk Noise Evaluation
In deep submicron technologies, the noise introduced on signals through the crosstalk coupling is an emerging problem. This paper presents a new analytical MOS transistor model valid in all regions of operation and dedicated to crosstalk noise evaluation and review some useful methods and related work on crosstalk analysis. The same MOS transistor model can be used for the victim and aggressors...
متن کاملFully differential cryogenic transistor amplifier
We have constructed a dc-coupled differential amplifier capable of operating in the 4.2 K – 300 K temperature range. The amplifier can be operated at high-bias setting, where it dissipates 5 mW, has noise temperature TN < 0.8 K at 4 k source resistance and >40 MHz bandwidth at 4.2 K bath temperature. The bias setting can be adjusted: at our lowest tested setting the amplifier dissipates <100 W,...
متن کاملThe Foundations of the EKV MOS Transistor Charge-Based Model
This paper presents the foundations that lead to the EKV MOS transistor compact model. It describes all the basic concepts required to derive the large-signal and smallsignal charge-based model that is valid in all modes of inversion, from weak to strong inversion through moderate inversion. The general small-signal model valid in quasistatic and non-quasi-static operation is also presented and...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2018
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2018.2854701